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K4S511533F-YC


Part Number K4S511533F-YC
Manufacturer Samsung semiconductor
Title 8M x 16Bit x 4 Banks Mobile SDRAM
Description The K4S511533F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s h...
Features
• 3.0V & 3.3V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs ...

File Size 137.01KB
Datasheet K4S511533F-YC PDF File








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K4S511533F-YF : The K4S511533F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications. ORDERING INFORMATION Part No. K4S511533F-Y(P)C/L/F75 K4S511533F-Y(P)C/L/F1H K4S511533F-Y(P)C/L/F1L Max Freq. 133MHz(CL3), 111MHz(CL2) 111MHz(CL2) 111MHz(CL=3)*1, 83MHz(CL2) LVCMOS 54 FB.

K4S511533F-YL : The K4S511533F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications. ORDERING INFORMATION Part No. K4S511533F-Y(P)C/L/F75 K4S511533F-Y(P)C/L/F1H K4S511533F-Y(P)C/L/F1L Max Freq. 133MHz(CL3), 111MHz(CL2) 111MHz(CL2) 111MHz(CL=3)*1, 83MHz(CL2) LVCMOS 54 FB.

K4S511533F-YPC : The K4S511533F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications. ORDERING INFORMATION Part No. K4S511533F-Y(P)C/L/F75 K4S511533F-Y(P)C/L/F1H K4S511533F-Y(P)C/L/F1L Max Freq. 133MHz(CL3), 111MHz(CL2) 111MHz(CL2) 111MHz(CL=3)*1, 83MHz(CL2) LVCMOS 54 FB.

K4S511533F-YPF : The K4S511533F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications. ORDERING INFORMATION Part No. K4S511533F-Y(P)C/L/F75 K4S511533F-Y(P)C/L/F1H K4S511533F-Y(P)C/L/F1L Max Freq. 133MHz(CL3), 111MHz(CL2) 111MHz(CL2) 111MHz(CL=3)*1, 83MHz(CL2) LVCMOS 54 FB.

K4S511533F-YPL : The K4S511533F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications. ORDERING INFORMATION Part No. K4S511533F-Y(P)C/L/F75 K4S511533F-Y(P)C/L/F1H K4S511533F-Y(P)C/L/F1L Max Freq. 133MHz(CL3), 111MHz(CL2) 111MHz(CL2) 111MHz(CL=3)*1, 83MHz(CL2) LVCMOS 54 FB.




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