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DIM800XSM33-F000

Dynex Semiconductor
Part Number DIM800XSM33-F000
Manufacturer Dynex Semiconductor
Description Single Switch IGBT Module
Published Apr 13, 2010
Detailed Description www.DataSheet4U.com DIM800XSM33-F000 Single Switch IGBT Module PDS5906 1.2 January 2009(LN26569) FEATURES Soft Punch T...
Datasheet PDF File DIM800XSM33-F000 PDF File

DIM800XSM33-F000
DIM800XSM33-F000


Overview
www.
DataSheet4U.
com DIM800XSM33-F000 Single Switch IGBT Module PDS5906 1.
2 January 2009(LN26569) FEATURES Soft Punch Through Silicon Isolated AlSiC Base with AlN Substrates High Thermal Cycling Capability 10µs Short Circuit Withstand Lead Free construction 10.
2kV isolation KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) *(measured at the auxiliary terminals) 3300V 2.
8V 800A 1600A APPLICATIONS High Reliability Inverters Motor Controllers Traction Drives Choppers The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 3600A.
The DIM800XSM33-F000 is a single switch 3300V, soft punch through n-channel enhancement mode, insulated gate bipolar transistor (IGBT) module.
The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10us short circuit withstand.
This device is optimised for traction drives and other applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
Fig.
1 Circuit configuration Outline type code: X ORDERING INFORMATION Order As: DIM800XSM33-F000 Note: When ordering, please use the complete part number (See Fig.
11 for further information) Fig.
2 Package ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ 1/8 DIM800XSM33-F000 www.
DataSheet4U.
com ABSOLUTE MAXIMUM RATINGS Stresses above those listed under ’Absolute Maximum Ratings’ may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed.
Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25° C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax It Visol ...



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