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HAT2285WP

Part Number	HAT2285WP
Manufacturer	Renesas Technology
Description	Silicon N-Channel Power MOSFET
Published	Apr 13, 2010
Detailed Description	Preliminary Datasheet HAT2285WP Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switchin...
Datasheet	HAT2285WP PDF File

Overview

Preliminary Datasheet HAT2285WP Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G1371-0310 Rev.
3.
10 May 13, 2010 Features  Low on-resistance  Capable of 4.
5 V gate drive  High density mounting  Built-in Schottky Barrier Diode Outline RENESAS Package code: PWSN0008DB-A (Package name: WPAK-D) 5 678 2 G1 4 32 1 78 D1 D1 56 S1/D2 S1/D2 4 G2 S1/D2(kelvin) 1 MOS1 S2 3 MOS2 and Schottky Barrier Diode 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Channel dissipation VDSS VGSS ID ID(pulse)Note1 IDR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1.
PW  10 s, duty cycle  1 % 2.
Tc = 25°C MOS1 30 ±20 14 56 14 8 150 –55 to +150 Ratings MOS2 & SBD 30 ±12 22 88 22 15 150 –55 to +150 (Ta = 25°C) Unit V V A A A W °C °C REJ03G1371-0310 Rev.
3.
10 May 13, 2010 Page 1 of 9 HAT2285WP Electrical Characteristics • MOS1 Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 3.
Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 — — 1.
0 — — 10 — — — — — — — — — — — — Typ — — — — 19 27 18 630 155 57 4.
6 2.
2 1.
2 7 30 35 3.
6 0.
91 18 Max — ±0.
1 1 2.
5 24 40 — — — — — — — — — — — 1.
19 — Preliminary Unit V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns (Ta = 25°C) Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 7 A, VGS = ...

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HAT2285WP Silicon N-Channel Power MOSFET - Renesas Technology

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