DatasheetsPDF.com

IXRH50N80

IXYS Corporation
Part Number IXRH50N80
Manufacturer IXYS Corporation
Description IGBT with Reverse Blocking capability
Published Apr 16, 2010
Detailed Description Advanced Technical Information www.DataSheet4U.com IGBT with Reverse Blocking capability IXRH 50N80 IXRH 50N60 VCES =...
Datasheet PDF File IXRH50N80 PDF File

IXRH50N80
IXRH50N80

Overview
Advanced Technical Information www.
DataSheet4U.
com IGBT with Reverse Blocking capability IXRH 50N80 IXRH 50N60 VCES = 600 / 800V IC25 = 60 A VCE(sat) = 2.
5 V tf = 75 ns TO-247 AD G C E C G C (TAB) C = Collector, TAB = Collector E G = Gate, E = Emitter, IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot TC = 25°C TC = 90°C VGE = 0/15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Conditions TVJ = 25°C to 150°C IXRH 50N80 IXRH 50N60 Maximum Ratings ±800 ±600 ± 20 60 40 80 500 300 V V V A A Features q q q A V W q IGBT with NPT (non punch through) structure reverse blocking capability independent from gate voltage - function of series diode monolithically integrated - no external series diode required - soft reverse recovery positive temperature coefficient of saturation voltage - optimum current distribution when paralleled Epoxy of TO 247 package meets UL 94V-0 Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min.
typ.
max.
2.
5 3.
0 4 3.
0 500 80 100 380 75 3.
6 2.
1 4 150 58 840 3.
1 8 0.
4 V V V mA mA nA ns ns ns ns mJ mJ nF nC A ns 0.
42 K/W Applications converters requiring reverse blocking capability: - current source inverters - matrix converters - bi-directional switches - resonant converters - induction heating - auxiliary switches for soft switching in the main current path VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon IRM trr RthJC IC = 40 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 2 mA; VGE = VCE VCE = 0.
8 VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 500 V; IC = 40 A VGE = 0/15 V; RG = 22 Ω VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 500V; VGE = 15 V; IC = 40 A IF = 40 A; diC/dt = -400 A/µs; TVJ = 125°C VCE = -500 V; VGE = 15 V IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr.
15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)