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IS41LV44002B

Integrated Silicon Solution
Part Number IS41LV44002B
Manufacturer Integrated Silicon Solution
Description 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Published Apr 17, 2010
Detailed Description IS41LV44002B 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE FEATURES • Extended Data-Out (EDO) Page Mode access cycle •...
Datasheet PDF File IS41LV44002B PDF File

IS41LV44002B
IS41LV44002B

Overview
IS41LV44002B 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE FEATURES • Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs • Refresh Interval: • • • • • – 2,048 cycles/32 ms Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden Single power supply: 3.
3V ± 10% Byte Write and Byte Read operation via two CAS Industrial Temperature Range: -40°C to +85°C Lead-free available www.
DataSheet4U.
com ISSI JULY 2006 ® DESCRIPTION The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory.
These devices offer an accelerated cycle access called EDO Page Mode.
EDO Page Mode allows 2,048 random accesses within a single row with access ...


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