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APT15GN120BDQ1G

Advanced Power Technology
Part Number APT15GN120BDQ1G
Manufacturer Advanced Power Technology
Description ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
Published Apr 20, 2010
Detailed Description TYPICAL PERFORMANCE CURVES ® APT15GN120BDQ1 www.DataSheet4U.com APT15GN120BDQ1G* APT15GN120BDQ1(G) 1200V *G Denotes R...
Datasheet PDF File APT15GN120BDQ1G PDF File

APT15GN120BDQ1G
APT15GN120BDQ1G

Overview
TYPICAL PERFORMANCE CURVES ® APT15GN120BDQ1 www.
DataSheet4U.
com APT15GN120BDQ1G* APT15GN120BDQ1(G) 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss.
Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient.
Low gate charge simplifies gate drive design and minimizes losses.
G C E TO -2 47 • Trench Gate: Low VCE(on) • Easy Paralleling • 1200V Field Stop C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 All Ratings: TC = 25°C unless otherwise specified.
APT15GN120BDQ1(G) UNIT Volts 1200 ±30 45 22 45 45A @ 1200V 195 -55 to 150 300 Amps Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max.
Lead Temp.
for Soldering: 0.
063" from Case for 10 Sec.
Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.
5mA) Gate Threshold Voltage (VCE = VGE, I C = 600µA, Tj = 25°C) MIN TYP MAX Units 1200 5.
0 1.
4 2 2 5.
8 1.
7 2.
0 6.
5 2.
1 200 TBD 120 Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) Volts I CES I GES RGINT Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Gate Resistor nA Ω CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
APT Website - http://www.
advancedpowe...


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