DatasheetsPDF.com

APT50GN120B2G

Advanced Power Technology
Part Number APT50GN120B2G
Manufacturer Advanced Power Technology
Description IGBT
Published Apr 20, 2010
Detailed Description TYPICAL PERFORMANCE CURVES ® APT50GN120B2 www.DataSheet4U.com APT50GN120B2G* APT50GN120B2(G) 1200V *G Denotes RoHS Co...
Datasheet PDF File APT50GN120B2G PDF File

APT50GN120B2G
APT50GN120B2G

Overview
TYPICAL PERFORMANCE CURVES ® APT50GN120B2 www.
DataSheet4U.
com APT50GN120B2G* APT50GN120B2(G) 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff.
The Trench Gate design results in superior VCE(on) performance.
Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient.
Built-in gate resistance ensures ultra-reliable operation.
Low gate charge simplifies gate drive design and minimizes losses.
(B2) T-Max® • • • • • 1200V NPT Field Stop Trench Gate: Low VCE(on) Easy Paralleling 10µs Short Circuit Capability Intergrated Gate Resistor: Low EMI, High Reliability C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current 8 All Ratings: TC = 25°C unless otherwise specified.
APT50GN120B2(G) UNIT Volts 1200 ±30 @ TC = 25°C 134 66 150 150A @ 1200V 543 -55 to 150 300 Watts °C Amps Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max.
Lead Temp.
for Soldering: 0.
063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 400µA) Gate Threshold Voltage (VCE = VGE, I C = 2mA, Tj = 25°C) MIN TYP MAX Units 1200 5 1.
4 2 2 5.
8 1.
7 1.
9 6.
5 2.
1 Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) Volts I CES I GES RGINT 100 TBD 600 4 Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Ga...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)