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APT50GN60B

Part Number APT50GN60B
Manufacturer Microsemi
Title Resonant Mode Combi IGBT
Description TYPICAL PERFORMANCE CURVES APT50GN60B APT50GN60B_S(G) APT50GN60S APT50GN60B(G) APT50GN60S(G) www.DataSheet4U.com 600V *G Denotes RoHS Compliant, ...
Features GN60B(G) UNIT Volts 600 ±30 @ TC = 25°C 107 64 150 150A @ 600V 366 -55 to 175 300 °C Watts Amps Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 @ TC = 175°C Switching Safe Operating Area @ TJ = 175°C Total Power Dissipation Operating and Storage Junction Temperature Range M...

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APT50GN60BDQ2 : TYPICAL PERFORMANCE CURVES APT50GN60BDQ2 APT50GN60BD_SDQ2(G) APT50GN60SDQ2 APT50GN60BDQ2(G) APT50GN60SDQ2(G) www.DataSheet4U.com 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses. (B) TO -2 47 D3PAK (S) C G E • 600V Field Stop • • • • Trench Gate: Low VCE(on) Easy Paralleling 6µs Short Circuit Capability 175°.

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