DatasheetsPDF.com

APT50GN60B

Microsemi
Part Number APT50GN60B
Manufacturer Microsemi
Description Resonant Mode Combi IGBT
Published Apr 20, 2010
Detailed Description TYPICAL PERFORMANCE CURVES APT50GN60B APT50GN60B_S(G) APT50GN60S APT50GN60B(G) APT50GN60S(G) www.DataSheet4U.com 600V *...
Datasheet PDF File APT50GN60B PDF File

APT50GN60B
APT50GN60B

Overview
TYPICAL PERFORMANCE CURVES APT50GN60B APT50GN60B_S(G) APT50GN60S APT50GN60B(G) APT50GN60S(G) www.
DataSheet4U.
com 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss.
Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient.
Low gate charge simplifies gate drive design and minimizes losses.
G C E (B) TO -2 47 D3PAK (S) C G E • 600V Field Stop • • • • Trench Gate: Low VCE(on) Easy Paralleling 6µs Short Circuit Capability 175°C Rated C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current 8 All Ratings: TC = 25°C unless otherwise specified.
APT50GN60B(G) UNIT Volts 600 ±30 @ TC = 25°C 107 64 150 150A @ 600V 366 -55 to 175 300 °C Watts Amps Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 @ TC = 175°C Switching Safe Operating Area @ TJ = 175°C Total Power Dissipation Operating and Storage Junction Temperature Range Max.
Lead Temp.
for Soldering: 0.
063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) Gate Threshold Voltage (VCE = VGE, I C = 800µA, Tj = 25°C) MIN TYP MAX Units 600 5.
0 1.
05 5.
8 1.
45 1.
7 25 2 6.
5 1.
85 Volts Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C) I CES I GES RG(int) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 µA nA Ω 7-2009 050-7612 Rev C Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V) Intergrat...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)