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IXFX21N100Q Datasheet PDF


Part Number IXFX21N100Q
Manufacturer IXYS
Title HiPerFET Power MOSFET
Description www.DataSheet4U.com HiPerFET TM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr S...
Features
• IXYS advanced low Qg process
• Low gate charge and capacitances - easier to drive - faster switching
• International standard packages
• Low RDS (on)
• Rated for unclamped Inductive load switching (UIS) rated
• Molding epoxies meet UL 94 V-0 flammability classification Applications
• DC-DC convert...

File Size 623.20KB
Datasheet IXFX21N100Q PDF File








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IXFX21N100F : HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFX 21N100F IXFK 21N100F VDSS = 1000 V ID25 = 21 A RDS(on) = 0.50 Ω trr ≤ 250 ns PLUS 247TM (IXFX) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 1000 1000 ± 20 ± 30 21 84 21.




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