DatasheetsPDF.com

SI7439DP

Part Number	SI7439DP
Manufacturer	Vishay
Description	P-Channel MOSFET
Published	Apr 22, 2010
Detailed Description	Si7439DP New Product Vishay Siliconix www.DataSheet4U.com P-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) −150 ...
Datasheet	SI7439DP PDF File

Overview

Si7439DP New Product Vishay Siliconix www.
DataSheet4U.
com P-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) −150 FEATURES ID (A) −5.
2 −5.
0 rDS(on) (W) 0.
090 @ VGS = −10 V 0.
095 @ VGS = −6 V D TrenchFETr Power MOSFETS D Ultra-Low On-Resistance Critical for Application D Low Thermal Resistance PowerPAKr Package with Low 1.
07-mm Profile D 100% Rg and Avalanche Tested APPLICATIONS D Active Clamp in Intermediate DC/DC Power Supplies PowerPAK SO-8 6.
15 mm S 1 2 S 3 S 5.
15 mm S 4 D 8 7 D 6 D 5 D G G Bottom View Ordering Information: Si7439DP-T1—E3 D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.
1 0 1 mH TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 10 secs Steady State −150 "20 Unit V −5.
2 −4.
1 −50 −4.
2 −40 80 5.
4 3.
4 −55 to 150 −3.
0 −2.
4 A −1.
6 mJ 1.
9 1.
2 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Notes Document Number: 73106 S-41526—Rev.
A, 16-Aug-04 www.
vishay.
com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 18 50 1.
0 Maximum 23 65 1.
5 Unit _C/W 1 Si7439DP Vishay Siliconix a.
Surface Mounted on 1” x 1” FR4 Board.
New Product www.
DataSheet4U.
com SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) DS( ) gfs VSD VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "20 V VDS = −150 V, VGS = 0 V VDS = −150 V, VGS = 0 V, TJ = 70_C VDS = −10 V, VG...

Similar Datasheet

SI7439DP P-Channel MOSFET - Vishay

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)