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IS41LV16256B

Integrated Silicon Solution
Part Number IS41LV16256B
Manufacturer Integrated Silicon Solution
Description 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Published Apr 22, 2010
Detailed Description IS41LV16256B 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE FEATURES • TTL compatible inputs and outputs • Refresh In...
Datasheet PDF File IS41LV16256B PDF File

IS41LV16256B
IS41LV16256B

Overview
IS41LV16256B 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE FEATURES • TTL compatible inputs and outputs • Refresh Interval: 512 cycles/8 ms • Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden • JEDEC standard pinout • Single power supply: 3.
3V ± 10% • Byte Write and Byte Read operation via two CAS • Lead-free available www.
DataSheet4U.
com ISSI APRIL 2005 ® DESCRIPTION The ISSI IS41LV16256B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory.
Both products offer accelerated cycle access EDO Page Mode.
EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word.
The Byte Write control, of upper and lower byte, makes the IS41LV16256B ideal for use in 16 and 32-bit wide data bus systems.
These features make the IS41LV16256B ideally suited for high band-width graphics, digital signal processing, highperformance computing systems, and peripheral applications.
The IS41LV16256B is packaged in 40-pin 400...


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