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K1S321615M

Samsung semiconductor
Part Number K1S321615M
Manufacturer Samsung semiconductor
Description 2Mx16 bit Uni-Transistor Random Access Memory
Published Apr 23, 2010
Detailed Description K1S321615M Document Title 2Mx16 bit Uni-Transistor Random Access Memory www.DataSheet4U.com UtRAM Revision History Re...
Datasheet PDF File K1S321615M PDF File

K1S321615M
K1S321615M

Overview
K1S321615M Document Title 2Mx16 bit Uni-Transistor Random Access Memory www.
DataSheet4U.
com UtRAM Revision History Revision No.
History 0.
0 Initial Draft - Design target Revised - Change package type from FBGA to TBGA.
- Improve operating current from 30mA to 25mA.
- Change input and output reference voltage from 1.
1V to 1.
5V at AC test condition.
- Expand max operating voltage from 3.
0V to 3.
3V.
- Expand max operating temperature from 70°C to 85°C.
- Release speed from 70/85ns to 100ns.
- Release standby current form 170µA to 200µA.
- Add Power up timing diagram.
- Add AC characteristics for continuous write.
Finalize - Release standby current form 200µA to 250µA.
- Release deep power down current form 10µA to 20µA.
- Release tWC for continuous write operation from 100ns to 110ns.
- Release tCW for continuous write operation from 90ns to 100ns.
- Release tAW for continuous write operation from 90ns to 100ns.
- Release tBW for continuous write operation from 90ns to 100ns.
- Release...


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