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DIM400DDM12-A000

Part Number	DIM400DDM12-A000
Manufacturer	Dynex Semiconductor
Description	Dual Switch IGBT Module
Published	Apr 24, 2010
Detailed Description	www.DataSheet4U.com DIM400DDM12-A000 Dual Switch IGBT Module DS5532-3.1 January 2009(LN26558) FEATURES 10µs Short Circ...
Datasheet	DIM400DDM12-A000 PDF File

Overview

www.
DataSheet4U.
com DIM400DDM12-A000 Dual Switch IGBT Module DS5532-3.
1 January 2009(LN26558) FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon Lead Free construction Isolated MMC Base with AlN Substrates High Thermal Cycling Capability KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 1200V 2.
2 V 400A 800A *(measured at the power busbars and not the auxiliary terminals) APPLICATIONS High Reliability Inverters Motor Controllers Traction Drives The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A.
The DIM400DDM12-A000 is a dual switch 1200V, nchannel enhancement mode, insulated gate bipolar transistor (IGBT) module.
The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10us short circuit withstand.
This device is optimised for traction drives and other applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
Fig.
1 Circuit configuration ORDERING INFORMATION Order As: DIM400DDM12-A000 Note: When ordering, please use the complete part number Outline type code: D (See Fig.
11 for further information) Fig.
2 Package ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ 1/8 DIM400DDM12-A000 www.
DataSheet4U.
com ABSOLUTE MAXIMUM RATINGS Stresses above those listed under ’Absolute Maximum Ratings’ may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed.
Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25°C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax It Visol QPD 2 Parameter Collector-e...

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DIM400DDM12-A000 Dual Switch IGBT Module - Dynex Semiconductor

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