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PMWD20XN

NXP Semiconductors
Part Number PMWD20XN
Manufacturer NXP Semiconductors
Description Dual N-channel uTrenchMOS extremely low level FET
Published Apr 27, 2010
Detailed Description PMWD20XN Rev. 02 — 26 April 2005 www.DataSheet4U.com Dual N-channel µTrenchMOS™ extremely low level FET Product data s...
Datasheet PDF File PMWD20XN PDF File

PMWD20XN
PMWD20XN

Overview
PMWD20XN Rev.
02 — 26 April 2005 www.
DataSheet4U.
com Dual N-channel µTrenchMOS™ extremely low level FET Product data sheet 1.
Product profile 1.
1 General description Dual common drain N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology.
1.
2 Features s Surface-mounted package s Extremely low threshold voltage s Low profile s Fast switching 1.
3 Applications s Portable appliances s Battery management 1.
4 Quick reference data s VDS ≤ 20 V s Ptot ≤ 4.
2 W s ID ≤ 10.
4 A s RDSon ≤ 24 mΩ 2.
Pinning information Table 1: Pin 1, 8 2, 3 4 5 6, 7 Pinning Description drain (D) source1 (S1) gate1 (G1) gate2 (G2) source2 (S2) G1 S1 G2 S2 mbl600 Simp...


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