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PMWD22XN

NXP Semiconductors
Part Number PMWD22XN
Manufacturer NXP Semiconductors
Description Dual N-channel uTrenchMOS extremely low level FET
Published Apr 27, 2010
Detailed Description PMWD22XN Rev. 01 — 15 August 2005 www.DataSheet4U.com Dual N-channel µTrenchMOS extremely low level FET Product data s...
Datasheet PDF File PMWD22XN PDF File

PMWD22XN
PMWD22XN

Overview
PMWD22XN Rev.
01 — 15 August 2005 www.
DataSheet4U.
com Dual N-channel µTrenchMOS extremely low level FET Product data sheet 1.
Product profile 1.
1 General description Dual common drain N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
1.
2 Features s Low threshold voltage s Fast switching s Common drain 1.
3 Applications s Portable appliances s Battery management 1.
4 Quick reference data s VDS ≤ 20 V s RDSon ≤ 26 mΩ s ID ≤ 9.
2 A s QGD = 2.
7 nC (typ) 2.
Pinning information Table 1: Pin 1, 8 2, 3 4 5 6, 7 Pinning Description drain (D) source1 (S1) gate1 (G1) gate2 (G2) source2 (S2) G1 S1 G2 S2 mbl600 Simplified outline 8 5 Symbol D D ...


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