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IXTP1R6N50P

IXYS
Part Number IXTP1R6N50P
Manufacturer IXYS
Description Power MOSFET
Published Apr 28, 2010
Detailed Description PolarTM Power MOSFET IXTY1R6N50P IXTP1R6N50P VDSS = 500V ID25 = 1.6A RDS(on)  6.5 N-Channel Enhancement Mode Avala...
Datasheet PDF File IXTP1R6N50P PDF File

IXTP1R6N50P
IXTP1R6N50P

Overview
PolarTM Power MOSFET IXTY1R6N50P IXTP1R6N50P VDSS = 500V ID25 = 1.
6A RDS(on)  6.
5 N-Channel Enhancement Mode Avalanche Rated TO-252 Fast Intrinsic Rectifier Symbol E VDSS VDGR T VGSS VGSM ID25 IDM E IA EAS dv/dt L PD TJ TJM O Tstg TL TSOLD S FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 V 500 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 1.
6 2.
5 1.
6 75 10 43 -55 .
.
.
+150 150 -55 .
.
.
+150 A A A mJ V/ns W  C  C  C Maximum Lead Temperature for Soldering 300 °C 1.
6 mm (0.
062in.
) from Case for 10s 260 °C Mounting Force (TO-263) Mounting Torque (TO-220) 10.
.
65 / 2.
2.
.
14.
6 1.
13 / 10 N/lb Nm/lb.
in TO-252 TO-220 0.
35 g 3.
00 g B Symbol Test Conditions O (TJ = 25C Unless Otherwise Specified) Characteristic Values Min.
Typ.
Max.
(IXTY) G S TO-220AB (IXTP) D (Tab) GD S D (Tab) G = Gate S = Source ...


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