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IXFK72N20

IXYS
Part Number IXFK72N20
Manufacturer IXYS
Description Power MOSFETs
Published Apr 28, 2010
Detailed Description www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminar...
Datasheet PDF File IXFK72N20 PDF File

IXFK72N20
IXFK72N20

Overview
www.
DataSheet4U.
com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight 1.
6 mm (0.
063 in) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C 72N20 80N20 72N20 80N20 VDSS IXFK72N20 IXFK80N20 ID25 RDS(on) 200 V 72 A 35 mW 200 V 80 A 30 mW trr £ 200 ns Maximum Ratings 200 200 ±20 ±30 72 80 288 320 74 45 5 360 -55 .
.
.
+150 150 -55 .
.
.
+150 300 0.
9/6 10 V V V V A A A A A mJ V/ns W °C °C °C °C Nm/lb.
in.
g TO-264 AA G D S (TAB) G = Gate S = Source D = Drain TAB = Drain Features • International standard packages • Molding epoxies meet UL 94 V-0 flammability classification • Low RDS (on) HDMOSTM process • Unclamped Inductive Switching (UIS) rated •...


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