DatasheetsPDF.com

RTR020N05

Rohm
Part Number RTR020N05
Manufacturer Rohm
Description Nch 45V 2A MOSFET
Published Apr 30, 2010
Detailed Description RTR020N05   Nch 45V 2A Small Signal MOSFET    Datasheet lOutline VDSS RDS(on)(Max.) ID PD 45V 180mΩ ±2.0A 1.0W SOT-...
Datasheet PDF File RTR020N05 PDF File

RTR020N05
RTR020N05


Overview
RTR020N05   Nch 45V 2A Small Signal MOSFET    Datasheet lOutline VDSS RDS(on)(Max.
) ID PD 45V 180mΩ ±2.
0A 1.
0W SOT-346T SC-96 TSMT3     for d lFeatures 1) Low on-resistance e 2) Built-in G-S Protection Diode d 3) Space saving small surface mount package   (TSMT3) n s 4) Pb-free lead plating ; RoHS compliant        lInner circuit me ign lPackaging specifications Packing sReel size (mm) m e lApplication o Switching Type Tape width (mm) Basic ordering unit (pcs) D Taping code c Marking e w lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value R e Drain - Source voltage t N Continuous drain current o Pulsed drain current NGate - Source voltage VDSS 45 ID ±2.
0 IDP*1 ±8 VGSS ±12 Embossed Tape 180 8 3000 TL QF Unit V A A V PD*2 1.
0 W Power dissipation PD*3 0.
7 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃                                                                                                                                         www.
rohm.
com © 2017 ROHM Co.
, Ltd.
All rights reserved.
1/11 20170316 - Rev.
002     RTR020N05                            Datasheet lThermal resistance                      Parameter Symbol Values Unit Min.
Typ.
Max.
RthJA*2 - - 125 ℃/W Thermal resistance, junction - ambient RthJA*3 - - 178 ℃/W r lElectrical characteristics (Ta = 25°C) fo Parameter Symbol Conditions Drain - Source breakdown d voltage V(BR)DSS VGS = 0V, ID = 1mA e Breakdown voltage d temperature coefficient  ΔV(BR)DSS  ID = 1mA    ΔTj     referenced to 25℃ n s Zero gate voltage drain current IDSS VDS = 45V, VGS = 0V e n Gate - Source leakage current IGSS VGS = ±12V, VDS = 0V m ig Gate threshold voltage Gate threshold voltage s temperature coefficient VGS(th) VDS = 10V, ID = 1mA  ΔVGS(th)   ID = 1mA    ΔTj     referenced to 25℃ om e Static drain - source c D on - state resistance VGS = 4.
5V, ID = 2.
0A RDS(on)*4...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)