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KUK7109-75AIE

KEXIN
Part Number KUK7109-75AIE
Manufacturer KEXIN
Description TrenchMOS standard level FET
Published Apr 30, 2010
Detailed Description SMD Type TrenchMOSTM standard level FET KUK7109-75AIE TO-263 + 0 .1 1 .2 7 -0 .1 Transistors IC www.DataSheet4U.com U...
Datasheet PDF File KUK7109-75AIE PDF File

KUK7109-75AIE
KUK7109-75AIE

Overview
SMD Type TrenchMOSTM standard level FET KUK7109-75AIE TO-263 + 0 .
1 1 .
2 7 -0 .
1 Transistors IC www.
DataSheet4U.
com Unit: mm +0.
1 1.
27-0.
1 +0.
2 4.
57-0.
2 Features Integrated temperature sensor Electrostatic discharge protection Q101 compliant Standard level compatible.
+ 0 .
2 8 .
7 -0 .
2 +0.
1 1.
27-0.
1 0.
1max +0.
1 0.
81-0.
1 + 0 .
2 5 .
2 8 -0 .
2 2.
54 +0.
2 -0.
2 +0.
1 5.
08-0.
1 + 0 .
2 2 .
5 4 -0 .
2 + 0 .
2 1 5 .
2 5 -0 .
2 2.
54 +0.
2 0.
4-0.
2 Absolute Maximum Ratings Ta = 25 Parameter Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Tmb = 25 ,VGS = 10 V Drain current (DC) Tmb = 100 ,VGS = 10 V Drain current (pulse peak value) *1 Total power dissipation Tmb = 25 gate-source clamping current (continuous) gate-source clamping current *3 Storage & operating temperature reverse drain current (DC) Tmb = 25 pulsed reverse drain current *1 non-repetitive avalanche energy *2 electrostatic discharge voltage; all pins *4 Thermal resistance junction to mounting base Thermal resistance junction to ambient * 1 Tmb = 25 ; pulsed; tp 10 ìs; 75 V; VGS = 10 V; RGS = 50Ù;starting Tj = 25 Tstg, Tj IDR IDRM EDS(AL)S Vesd Rth j-mb Rth j-a Symbol VDS VDGR VGS ID ID IDM Ptot IGS(CL) Rating 75 75 20 120 75 480 272 10 50 -55 to 175 120 75 480 739 6 0.
55 50 A A A J KV K/W K/W Unit V V V A A A W mA mA *2 unclamped inductive load; ID = 75 A;VDS *3 tp = 5 ms; = 0.
01 *4 Human Body Model; C = 100 pF;R = 1.
5 K 5 .
6 0 1Gate gate 1 2Drain drain 2 3Source source 3 www.
kexin.
com.
cn 1 SMD Type KUK7109-75AIE Electrical Characteristics Ta = 25 Parameter drain-source breakdown voltage Symbol V(BR)DSS Testconditons ID = 0.
25 mA; VGS = 0 V;Tj = 25 ID = 0.
25 mA; VGS = 0 V;Tj = -55 ID = 1 mA; VDS = VGS;Tj = 25 gate-source threshold voltage VGS(th) ID = 1 mA; VDS = VGS;Tj = 175 ID = 1 mA; VDS = VGS;Tj = -55 Zero gate voltage drain current gate-source breakdown voltage gate-source leakage current IDSS VDS = 75 V; VGS = 0 V;Tj = 25 VDS = 75 V; VGS = 0 V;Tj = 175 V(BR)GSS IG = IG...


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