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KUK7607-55B

KEXIN
Part Number KUK7607-55B
Manufacturer KEXIN
Description TrenchMOS standard level FET
Published Apr 30, 2010
Detailed Description SMD Type TrenchMOSTM standard level FET KUK7607-55B TO-263 + 0 .1 1 .2 7 -0 .1 Transistors IC www.DataSheet4U.com Uni...
Datasheet PDF File KUK7607-55B PDF File

KUK7607-55B
KUK7607-55B

Overview
SMD Type TrenchMOSTM standard level FET KUK7607-55B TO-263 + 0 .
1 1 .
2 7 -0 .
1 Transistors IC www.
DataSheet4U.
com Unit: mm +0.
1 1.
27-0.
1 +0.
2 4.
57-0.
2 Features Very low on-state resistance Q101 compliant 175 rated + 0 .
2 8 .
7 -0 .
2 +0.
1 1.
27-0.
1 0.
1max +0.
1 0.
81-0.
1 + 0 .
2 5 .
2 8 -0 .
2 Standard level compatible.
2.
54 +0.
2 -0.
2 +0.
1 5.
08-0.
1 + 0 .
2 2 .
5 4 -0 .
2 + 0 .
2 1 5 .
2 5 -0 .
2 2.
54 +0.
2 0.
4-0.
2 Absolute Maximum Ratings Ta = 25 Parameter Drain-source voltage Drain-gate voltage RGS = 20 KÙ Gate-source voltage Drain current (DC) Tmb = 25 ,VGS = 10 V Drain current (DC) Tmb = 100 ,VGS = 10 V Drain current (pulse peak value) *1 Total power dissipation Tmb = 25 Storage & operating temperature reverse drain current (DC) Tmb = 25 pulsed reverse drain current *1 non-repetitive avalanche energy *2 Thermal resistance junction to mounting base Thermal resistance junction to ambient * 1 Tmb = 25 ; pulsed; tp 10 ìs; 55 V; VGS = 10 V; RGS = 50Ù;starting Tmb = 25 Symbol VDS VDGR VGS ID ID IDM Ptot Tstg, Tj IDR IDRM EDS(AL)S Rth j-mb Rth j-a Rating 55 55 20 119 75 478 203 -55 to 175 119 75 478 351 0.
74 50 A A A J K/W K/W Unit V V V A A A W *2 unclamped inductive load; ID = 75 A;VDS 5 .
6 0 1Gate gate 1 2Drain drain 2 3Source source 3 www.
kexin.
com.
cn 1 SMD Type KUK7607-55B Electrical Characteristics Ta = 25 Parameter drain-source breakdown voltage Symbol V(BR)DSS Testconditons ID = 0.
25 mA; VGS = 0 V;Tj = 25 ID = 0.
25 mA; VGS = 0 V;Tj = -55 ID = 1 mA; VDS = VGS;Tj = 25 gate-source threshold voltage VGS(th) ID = 1 mA; VDS = VGS;Tj = 175 ID = 1 mA; VDS = VGS;Tj = -55 Zero gate voltage drain current gate-source leakage current drain-source on-state resistance total gate charge gate-to-source charge gate-to-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance internal source inductance source-drain (diode forward) voltage reverse recovery time r...


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