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MMBD217SEW

Part Number	MMBD217SEW
Manufacturer	SEMTECH ELECTRONICS
Description	SILICON EPITAXIAL PLANAR SWITCHING DIODE
Published	May 6, 2010
Detailed Description	MMBD217SEW SILICON EPITAXIAL PLANAR SWITCHING DIODE 3 Applications • Ultra high speed switching 1 2 Marking Code: A7 ...
Datasheet	MMBD217SEW PDF File

Overview

MMBD217SEW SILICON EPITAXIAL PLANAR SWITCHING DIODE 3 Applications • Ultra high speed switching 1 2 Marking Code: A7 Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak www.
DataSheet4U.
com Reverse Voltage Symbol VRM VR IO IFM IFSM Pd TJ Ts Value 80 80 100 300 4 200 150 - 55 to + 150 Unit V V mA mA A mW O Reverse Voltage Average Rectified Forward Current (Single) Maximum (Peak) Forward Current (Single) Peak Forward Surge Current (tp = 1 µs) Power Dissipation Junction Temperature Storage Temperature Range C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 70 V Capacitance between Terminals at VR = 6, f = 1 MHz Reverse Recovery Time at IF = 5 mA, VR = 6 V, RL = 50 Ω Symbol VF IR CT trr Max.
1.
2 0.
1 3.
5 4 Unit V µA pF ns SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 10/10/2008 MMBD217SEW www.
DataSheet4U...

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MMBD217SEW SILICON EPITAXIAL PLANAR SWITCHING DIODE - SEMTECH ELECTRONICS

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