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K6R1008V1B-P

Samsung semiconductor
Part Number K6R1008V1B-P
Manufacturer Samsung semiconductor
Description 128Kx8 Bit High Speed Static RAM
Published May 10, 2010
Detailed Description K6R1008V1B-C/B-L, K6R1008V1B-I/B-P Document Title Preliminary PRELIMINARY CMOS SRAM 128Kx8 Bit High Speed Static RAM(3...
Datasheet PDF File K6R1008V1B-P PDF File

K6R1008V1B-P
K6R1008V1B-P

Overview
K6R1008V1B-C/B-L, K6R1008V1B-I/B-P Document Title Preliminary PRELIMINARY CMOS SRAM 128Kx8 Bit High Speed Static RAM(3.
3V Operating), Revolutionary Pin out.
Operated at Commercial and Industrial Temperature Ranges.
Revision History Rev No.
Rev.
0.
0 Rev.
1.
0 History Initial release with Design Target.
Release to Preliminary Data Sheet.
1.
1.
Replace Design Target to Preliminary.
Release to Final Data Sheet.
2.
1.
Delete Preliminary.
2.
2.
Delete 32-SOJ-300 package.
2.
3.
Add Capacitive load of the test environment in A.
C test load.
2.
4.
Change D.
C characteristics.
Previous spec.
Changed spec.
Items (8/10/12ns part) (8/10/12ns part) ICC 160/150/140mA 160/155/150mA ISB 30mA 50mA Change Standby an...


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