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SEMIX302GB126HDS

Semikron International
Part Number SEMIX302GB126HDS
Manufacturer Semikron International
Description IGBT
Published May 13, 2010
Detailed Description SEMiX302GB126HDs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V Tj = 125 ...
Datasheet PDF File SEMIX302GB126HDS PDF File

SEMIX302GB126HDS
SEMIX302GB126HDS

Overview
SEMiX302GB126HDs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V Tj = 125 °C VCES ≤ 1200 V VGES tpsc Tj = 150 °C Tc = 25 °C Tc = 80 °C 1200 311 218 200 400 -20 .
.
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20 10 -40 .
.
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150 Tc = 25 °C Tc = 80 °C 292 202 200 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 400 1300 -40 .
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150 600 -40 .
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125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX®2s Trench IGBT Modules SEMiX302GB126HDs Tj Inverse diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Preliminary Data www.
DataSheet4U.
com Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no.
E63532 Tj = 150 °C Typical Applications • AC inverter drives • UPS • Electronic Welding Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Rth(j-s) per IGBT per IGBT IC = 200 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE = 15 V VGE=VCE, IC = 8 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V.
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+ 15 V Tj = 25 °C VCC = 600 V IC = 200 A Tj = 125 °C RG on = 2.
8 Ω RG off = 2.
8 Ω Tj = 25 °C Tj = 125 °C f = 1 MHz f = 1 MHz f = 1 MHz 14.
4 0.
75 0.
65 1600 3.
75 320 50 30 600 100 26 0.
12 Tj = 25 °C Tj = 125 °C 5 1.
7 2.
00 1 0.
9 3.
5 5.
5 5.
8 0.
1 2.
1 2.
45 1.
2 1.
1 4.
5 6.
8 6.
5 0.
3 V V V V mΩ mΩ V mA mA nF nF nF nC Ω ns ns mJ ns ns mJ K/W K/W Remarks • Case temperatur limited to TC=125°C max.
• Not for new design Conditions min.
typ.
max.
Unit GB © by SEMIKRON Rev.
27 – 02.
12.
2008 1 SEMiX302GB126HDs Characteristics Symbol Conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C IF = 200 A Tj = 125 °C di/dtoff = 5900 A/µs T = 125 °C j VGE = -15 V T j = 125 °C VCC = 600 V per diode per diode 18 res.
, terminal-chip per module to heat sink (M5) to terminals (M6) 3 2.
5 TC = 25 °C TC = 125 °C 0.
7 1 0.
045 5 5 ...


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