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SEMIX353GB176HDS

Semikron International
Part Number SEMIX353GB176HDS
Manufacturer Semikron International
Description IGBT
Published May 13, 2010
Detailed Description SEMiX353GB176HDs SEMiX® 3s Trench IGBT Modules SEMiX353GB176HDs Features • Homogeneous Si • Trench = Trenchgate technol...
Datasheet PDF File SEMIX353GB176HDS PDF File

SEMIX353GB176HDS
SEMIX353GB176HDS

Overview
SEMiX353GB176HDs SEMiX® 3s Trench IGBT Modules SEMiX353GB176HDs Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no.
E63532 Typical Applications* • AC inverter drives • UPS • Electronic welders Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 2xICnom VGES tpsc Tj VCC = 1000 V VGE ≤ 20 V VCES ≤ 1700 V Tj = 125 °C Inverse diode IF Tj = 150 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 2xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tstg Tterminal = 80 °C Visol AC sinus 50Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf IC = 225 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE = 15 V Tj = 25 °C Tj = 125 °C VGE=VCE, IC = 9 mA VGE = 0 V VCE = 1700 V Tj = 25 °C Tj = 125 °C VCE = 25 V V...


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