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SIM200D06AV2

SemiWell Semiconductor
Part Number SIM200D06AV2
Manufacturer SemiWell Semiconductor
Description IGBT
Published May 14, 2010
Detailed Description Preliminary SIM200D06AV2 VCES = 600V Ic= 200A VCE(ON) typ. = 1.6V @Ic= 200A “HALF-BRIDGE” IGBT Feature ▪ design techno...
Datasheet PDF File SIM200D06AV2 PDF File

SIM200D06AV2
SIM200D06AV2

Overview
Preliminary SIM200D06AV2 VCES = 600V Ic= 200A VCE(ON) typ.
= 1.
6V @Ic= 200A “HALF-BRIDGE” IGBT Feature ▪ design technology ▪ Low VCE (sat) ▪ Low Turn-off losses ▪ Short tail current for over 20KHz Applications ▪ Motor controls ▪ VVVF inverters ▪ Inverter-type welding MC over 18KHZ ▪ SMPS, Electrolysis ▪ UPS/EPS, Robotics PKG: V2=48mm Absolute www.
DataSheet4U.
com Symbol VCES VGE IC ICP IF IFM tp Viso Weight Tj Tstg Md Maximum Ratings @ Tj=25 Parameter (Per Leg) Condition TC = Ratings 600 20 Unit V V A A A A Collector-to-Emitter Voltage Gate emitter voltage Continuous Collector Current Pulsed collector current Diode Continuous Forward Current Diode Maximum Forward Current Short circuit test, VGE = 15V, VCC = 360V Isolation Voltage test Weight of Module Junction Temperature Storage Temperature Mounting torque with screw : M5 Terminal connection torque : M5 TC = 80 TC = TC = 80 TC = TC = 150 25 200 (290) 450 200 (290) 400 6 (8) 2500 190 -40 ~ 150 -40 ~ 125 2.
0 2.
0 AC @ 1 minute V g N.
m N.
m Static Characteristics @ Tj = 25 Parameters VCE(ON) VGE(th) ICES IGES VF RGINT Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Forward voltage drop Integrated gate resistor (unless otherwise specified) Min Typ 1.
60 5.
8 Max 1.
95 Unit V Test conditions IC = 200A, VGE = 15V VCE = VGE, IC = 4 VGE= 0V, VCE = 600V VCE = 0V, VGE = IF = 200A V 6.
5 5.
0 400 1.
6 2 1.
9 Preliminary Electrical Characteristic Values (IGBT / DIODE) @ Tj = 25 Parameters Ciss Coss Crss td(on) tr td(off) tf Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time 600 250 130 9 ns µC SIM200D06AV2 (unless otherwise specified) Unit Test conditions VCE = 25V, VGE = V f = 1 MHz Min Typ 9200 580 270 145 30 Max pF Inductive Switching (125 VCC = 300V ns IC = 200A, VGE = RG = 2 V VR = 600V IF = 200A, VR = 300V di / dt = 2200A / 15V 340 60 VBR Cathod...


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