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SIM200D12SV3

SemiWell Semiconductor
Part Number SIM200D12SV3
Manufacturer SemiWell Semiconductor
Description HALF-BRIDGE IGBT
Published May 14, 2010
Detailed Description Preliminary SIM200D12SV3 VCES = 1200V Ic = 200A VCE(ON) typ. = 1.7V @ Ic = 200A “HALF-BRIDGE” IGBT MODULE Features ▪ r...
Datasheet PDF File SIM200D12SV3 PDF File

SIM200D12SV3
SIM200D12SV3

Overview
Preliminary SIM200D12SV3 VCES = 1200V Ic = 200A VCE(ON) typ.
= 1.
7V @ Ic = 200A “HALF-BRIDGE” IGBT MODULE Features ▪ rench gate + field stopper, using Infineon chip design ▪ 10µs Short circuit capability ▪ Low turn-off losses ▪ Short tail current for over 18KHz ▪ Positive VCE(on) temperature coefficient www.
DataSheet4U.
com Applications ▪ AC & DC Motor controls ▪ VVVF inverters ▪ Optimized for high frequency inverter Type Welding machines ▪ SMPS ▪ UPS, Robotics Package : V3 Absolute Maximum Ratings @ Tj=25 Symbol VCES VGES IC ICM IF IFM TSC Viso Tj Tstg Weight Mounting Torque (per leg) Parameter Collector-to-Emitter Voltage Gate emitter voltage Continuous Collector Current Pulsed collector current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Isolation Voltage test Junction Temperature Storage Temperature Weight of Module Power Terminal Screw : M5 Terminal connection Screw : M5 TC = 80 TC = 25 TC = 80 Tc= VGE = 0V, Condition IC = 1.
0mA Ratings 1200 ± 20 200(260) 400 200(260) 400 10 Unit V V A A A A µs V AC 1 minute 2500 -40 ~ 150 -40 ~ 125 360 3.
5 3.
5 g Nm Nm Electrical Characteristics @ Tj = 25 Symbol V(BR)CES VCE(ON) VGE(th) ICES IGES (unless otherwise specified) Min 1200 1.
4 5.
0 - Parameters Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Typ 1.
7 5.
8 - Max 2.
15 6.
5 1.
0 ± 200 Unit Test conditions VGE = 0V, IC = 1.
0mA V IC = 200A, VGE = 15V VCE = VGE, IC = 500µA VCE = 1200V VGE = ± 20V mA nA VGE = 0V, VCE = 0V, Preliminary VFM Diode Forward Voltage Drop 1.
65 SIM200D12SV3 2.
15 V IC = 200A Switching Characteristic @ Tj = 25 Symbol Cies Coss Cres (unless otherwise specified) Min - Parameters Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Typ 17306 810 360 300 108 660 156 160 250 Max - Unit Test ...


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