DatasheetsPDF.com

K4X56163PI-FE

Part Number	K4X56163PI-FE
Manufacturer	Samsung semiconductor
Description	16Mx16 Mobile DDR SDRAM
Published	May 16, 2010
Detailed Description	K4X56163PI - L(F)E/G 16Mx16 Mobile DDR SDRAM 1. FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two dat...
Datasheet	K4X56163PI-FE PDF File

Overview

K4X56163PI - L(F)E/G 16Mx16 Mobile DDR SDRAM 1.
FEATURES • VDD/VDDQ = 1.
8V/1.
8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 2, 3 ) - Burst Length ( 2, 4, 8, 16 ) - Burst Type (Sequential & Interleave) • EMRS cycle with address key programs - Partial Array Self Refresh ( Full, 1/2, 1/4 Array ) - Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 ) • Internal Temperature Compensated Self Refresh • All inputs except data & DM are sampled at the positive going edge of the system clock(CK).
www.
DataSheet4U.
com • Data I/O transactions on both edges of data strobe, DM for masking.
• Edge aligned data output, center aligned data input.
• No DLL; CK to DQS is not synchronized.
• DM0 - DM3 for write masking only.
• Auto refresh duty cycle - 7.
8us for -25 to 85 °C Mobile DDR SDRAM 2.
Operating Frequency DDR333 Speed @CL2 S...

Similar Datasheet

K4X56163PI-FE 16Mx16 Mobile DDR SDRAM - Samsung semiconductor
K4X56163PI-FG 16Mx16 Mobile DDR SDRAM - Samsung semiconductor
K4X56163PI-LE 16Mx16 Mobile DDR SDRAM - Samsung semiconductor
K4X56163PI-LG 16Mx16 Mobile DDR SDRAM - Samsung semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)