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AO4918A

Alpha & Omega Semiconductors
Part Number AO4918A
Manufacturer Alpha & Omega Semiconductors
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Published May 22, 2010
Detailed Description AO4918A Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4918A uses advanced...
Datasheet PDF File AO4918A PDF File

AO4918A
AO4918A

Overview
AO4918A Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4918A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters.
A Schottky diode is co-packaged in www.
DataSheet4U.
com parallel with the synchronous MOSFET to boost efficiency further.
AO4918A is Pb-free (meets ROHS & Sony 259 specifications).
AO4918AL is a Green Product ordering option.
AO4918A and AO4918AL are electrically identical.
Features Q1 VDS (V) = 30V ID = 9.
3A RDS(ON) < 14.
5mΩ RDS(ON) < 16mΩ Q2 VDS(V) = 30V ID=8.
5A <18mΩ (VGS = 10V) <27mΩ (VGS = 4.
5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.
5V@1A D1 D2 D2 G1 S1/A 1 2 3 4 8 7 6 5 G2 D1/S2/K D1/S2/K D1/S2/K K D2 Q1 G1 S1 A Q2 G2 S2 SOIC-8 Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25°C Current A ID TA=70°C Pulsed Drain Current B TA=25°C TA=70°C Power Dissipation Junction and Storage Temperature Range Parameter Reverse Voltage Continuous Forward Current A IDM PD TJ, TSTG Symbol VDS TA=25°C TA=70°C B Max Q1 30 ±12 9.
3 7.
4 40 2 1.
28 -55 to 150 Max Q2 30 ±20 8.
5 6.
7 30 2 1.
28 -55 to 150 Units V V A W °C Units V A Maximum Schottky 30 3 2.
2 20 2 1.
28 -55 to 150 IF IFM PD TJ, TSTG Pulsed Diode Forward Current Power Dissipation A TA=25°C TA=70°C Junction and Storage Temperature Range W °C Alpha & Omega Semiconductor, Ltd.
AO4918A Parameter: Thermal Characteristics MOSFET Q1 A t ≤ 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient A C Steady-State Maximum Junction-to-Lead Parameter: Thermal Characteristics MOSFET Q2 t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A C Steady-State Maximum Junction-to-Lead Thermal Characteristics Schottky A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient C Maximum Junc...


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