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AUIRF1010EZS

International Rectifier
Part Number AUIRF1010EZS
Manufacturer International Rectifier
Description Power MOSFET
Published May 22, 2010
Detailed Description AUTOMOTIVE GRADE PD - 95962 Features O O O O O O O Advanced Process Technology Ultra Low On-Resistance 175°C Operatin...
Datasheet PDF File AUIRF1010EZS PDF File

AUIRF1010EZS
AUIRF1010EZS

Overview
AUTOMOTIVE GRADE PD - 95962 Features O O O O O O O Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET® Power MOSFET D AUIRF1010EZ AUIRF1010EZS AUIRF1010EZL 60V 8.
5mΩ 84A 75A D V(BR)DSS RDS(on) max.
ID (Silicon Limited) G S ID (Package Limited) D Description www.
DataSheet4U.
com Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Absolute Maximum Ratings D G D S TO-220AB AUIRF1010EZ S D G D2Pak AUIRF1010EZS S D G TO-262 AUIRF1010EZL G Gate D Drain S Source Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T A) is 25°C, unless otherwise specified.
Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS EAS (tested) IAR EAR TJ TSTG Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Li...


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