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AUIRF1404ZL

International Rectifier
Part Number AUIRF1404ZL
Manufacturer International Rectifier
Description Power MOSFET
Published May 22, 2010
Detailed Description AUTOMOTIVE GRADE PD - 97460 Features l l l l l l l AUIRF1404Z AUIRF1404ZS AUIRF1404ZL HEXFET® Power MOSFET V(BR)DSS R...
Datasheet PDF File AUIRF1404ZL PDF File

AUIRF1404ZL
AUIRF1404ZL

Overview
AUTOMOTIVE GRADE PD - 97460 Features l l l l l l l AUIRF1404Z AUIRF1404ZS AUIRF1404ZL HEXFET® Power MOSFET V(BR)DSS RDS(on) max.
ID (Silicon Limited) 40V 3.
7mΩ 180A 160A Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D G S ID (Package Limited) D D n Description Specifically designed for Automotive applications, www.
DataSheet4U.
com this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
D G TO-220AB AUIRF1404Z D S G D S G D S D2Pak AUIRF1404ZS TO-262 AUIRF1404ZL G Gate D Drain S Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter ID @ TC = 25°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (tested ) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Max.
180 120 160 710 200 n Units A ™ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Av...


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