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AUIRF2804L

International Rectifier
Part Number AUIRF2804L
Manufacturer International Rectifier
Description Power MOSFET
Published May 22, 2010
Detailed Description AUTOMOTIVE GRADE PD -96290 Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating...
Datasheet PDF File AUIRF2804L PDF File

AUIRF2804L
AUIRF2804L

Overview
AUTOMOTIVE GRADE PD -96290 Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET® Power MOSFET D AUIRF2804 AUIRF2804S AUIRF2804L 40V max.
2.
0mΩk 1.
5mΩk 270A c V(BR)DSS RDS(on) typ.
G S ID (Silicon Limited) Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest www.
DataSheet4U.
com processing techniques to achieve extremely low onresistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
D D ID (Package Limited) 195A D G D S G D S G D S TO-220AB AUIRF2804 G D2Pak AUIRF2804S D TO-262 AUIRF2804L S Absolute Maximum Ratings Gate Drain Source Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (tested) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Therm...


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