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SSM9563

SeCoS Halbleitertechnologie GmbH
Part Number SSM9563
Manufacturer SeCoS Halbleitertechnologie GmbH
Description P-Channel Enhancement Mode Power Mos.FET
Published May 24, 2010
Detailed Description SSM9563 Elektronische Bauelemente -6A, -40V,RDS(ON) 40m£[ P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Produ...
Datasheet PDF File SSM9563 PDF File

SSM9563
SSM9563

Overview
SSM9563 Elektronische Bauelemente -6A, -40V,RDS(ON) 40m£[ P-Channel Enhancement Mode Power Mos.
FET RoHS Compliant Product Description The SSM9563 provide the designer with best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SSM9563 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
SOT-223 Features www.
DataSheet4U.
com * Simple Drive Requirement * Fast Switching Characteristic * Lower On-Resistance D REF.
A C D E I H Date Code 9 5 6 3 G G D S Millimeter Min.
Max.
6.
70 7.
30 2.
90 3.
10 0.
02 0.
10 0° 10° 0.
60 0.
80 0.
25 0.
35 REF.
B J 1 2 3 4 5 S Millimeter Min.
Max.
13°TYP.
2.
30 REF.
6.
30 6.
70 6.
30 6.
70 3.
30 3.
70 3.
30 3.
70 1.
40 1.
80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 Symbol VDS VGS ID@TA=25 oC ID@TA=70 C IDM PD@TA=25 C o o Ratings -40 ±25 -6 .
.
0 -4 .
.
8 -30 2.
7 0.
02 Unit V V A A A W W / oC o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max.
Rthj-a Ratings 50 Unit o C/W http://www.
SeCoSGmbH.
com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev.
A Page 1 of 4 SSM9563 Elektronische Bauelemente -6A, -40V,RDS(ON) 40m£[ P-Channel Enhancement Mode Power Mos.
FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Gate Threshold Voltage Gate-Source Leakage Current www.
DataSheet4U.
com o Symbol BVDSS BVDS/ Tj VGS(th) IGSS o Min.
- 40 _ Typ.
_ - 0.
03 _ _ _ _ _ _ Max.
_ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=-250uA Reference to 25 C, ID=- 1mA VDS=VGS, ID=-250uA VGS=±25V VDS=-40V,VGS=0 VDS=-32 ,VGS=0 VGS=-10V, ID=- 6A...


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