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H5551

Part Number	H5551
Manufacturer	SHANTOU HUASHAN ELECTRONIC DEVICES
Description	NPN SILICON TRANSISTOR
Published	May 29, 2010
Detailed Description	N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H5551 ¨€ AMPLIFIER TRANSISTOR Coll...
Datasheet	H5551 PDF File

Overview

N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.
,Ltd.
H5551 ¨€ AMPLIFIER TRANSISTOR Collector-Emitter Voltage:Vceo=160V.
CollectorDissipation:Pc(max)=625mW ¨€ T stg ¡ ª Tj¡ª ABSOLUTE MAXIMUM RATINGS£¨ Storage Temperature¡ - ¡ Junction Temperature¡ - ¡ - ¡ - ¡ - ¡ Collector Dissipation¡- ¡Collector-Base Voltage¡-¡ Collector-Emitter Voltage¡-¡ Emitter-Base Voltage¡ Collector Current¡- ¡- ¡¡-¡-¡¡- ¡¡¡- ¡¡- ¡- ¡¡-¡¡-¡-¡¡- ¡¡-¡¡¡¡- ¡¡- ¡- ¡¡¡- ¡¡- Ta=25¡æ£© -55~150¡æ 150¡æ 625mW 180V 160V ¡ - 6V 600mA TO-92 www.
DataSheet4U.
com PC¡ª VCBO¡ª VCEO¡ª V EB O ¡ ª ¡ ª IC¡ª 1¨D Emitter£¬ E 2¨D Base£¬ B 3¨D Collector£¬ C ¨€ ELECTRICAL CHARACTERISTICS£¨ Characteristi...

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