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MRF5S9150HR3

Freescale Semiconductor
Part Number MRF5S9150HR3
Manufacturer Freescale Semiconductor
Description SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs
Published May 31, 2010
Detailed Description Freescale Semiconductor Technical Data Document Number: MRF5S9150H Rev. 1, 5/2006 RF Power Field Effect Transistors N...
Datasheet PDF File MRF5S9150HR3 PDF File

MRF5S9150HR3
MRF5S9150HR3

Overview
Freescale Semiconductor Technical Data Document Number: MRF5S9150H Rev.
1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 869 to 960 MHz.
Suitable for multicarrier amplifier applications.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1500 mA, Pout = 33 Watts Avg.
, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13).
Channel Bandwidth = 1.
2288 MHz.
PAR = 9.
8 dB @ 0.
01% Probability on CCDF.
Power Gain — 19.
7 dB Drain Efficiency — 28.
4% ACPR @ 750 kHz Offset — - 46.
8 dBc in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 150 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters www.
DataSheet4U.
com • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant • In Tape and Reel.
R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF5S9150HR3 MRF5S9150HSR3 880 MHz, 33 W AVG.
, 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF5S9150HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF5S9150HSR3 Table 1.
Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS Tstg TC TJ Value - 0.
5, +68 - 0.
5, +15 - 65 to +150 150 200 Unit Vdc Vdc °C °C °C Table 2.
Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 150 W CW Case Temperature 76°C, 33 W CW Symbol RθJC Value (1) 0.
34 0.
34 Unit °C/W Table 3.
ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) III (Minimum) 1.
Refer t...


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