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MRF18090BSR3

Freescale Semiconductor
Part Number MRF18090BSR3
Manufacturer Freescale Semiconductor
Description LATERAL N-CHANNEL RF POWER MOSFETs
Published May 31, 2010
Detailed Description Freescale Semiconductor Technical Data Document Number: MRF18090B Rev. 7, 5/2006 RF Power Field Effect Transistors N ...
Datasheet PDF File MRF18090BSR3 PDF File

MRF18090BSR3
MRF18090BSR3

Overview
Freescale Semiconductor Technical Data Document Number: MRF18090B Rev.
7, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.
9 to 2.
0 GHz.
Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
To be used in class AB for GSM and EDGE cellular radio applications.
• GSM and EDGE Performances, Full Frequency Band Power Gain — 13.
5 dB (Typ) @ 90 Watts (CW) Efficiency — 45% (Typ) @ 90 Watts (CW) • Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection www.
DataSheet4U.
com • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • RoHS Compliant • In Tape and Reel.
R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF18090BR3 MRF18090BSR3 1.
90 - 1.
99 GHz, 90 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETS CASE 465B - 03, STYLE 1 NI - 880 MRF18090BR3 CASE 465C - 02, STYLE 1 NI - 880S MRF18090BSR3 Table 1.
Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.
5, +65 - 0.
5, +15 250 1.
43 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Table 2.
Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 0.
7 Unit °C/W Table 3.
ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) © Freescale Semiconductor, Inc.
, 2006.
All rights reserved.
MRF18090BR3 MRF18090BSR3 1 RF Device Data Freescale Semiconductor Table 4.
Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Drain- Source Breakdown Voltag...


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