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FQD6N60C

Fairchild Semiconductor
Part Number FQD6N60C
Manufacturer Fairchild Semiconductor
Description 600V N-Channel MOSFET
Published Jun 3, 2010
Detailed Description FQD6N60C 600V N-Channel MOSFET QFET FQD6N60C 600V N-Channel MOSFET Features • 4 A, 600 V, RDS(on) = 2.0 Ω @ VGS = 10 V ...
Datasheet PDF File FQD6N60C PDF File

FQD6N60C
FQD6N60C

Overview
FQD6N60C 600V N-Channel MOSFET QFET FQD6N60C 600V N-Channel MOSFET Features • 4 A, 600 V, RDS(on) = 2.
0 Ω @ VGS = 10 V • Low gate charge ( typical 16 nC ) • Low Crss ( typical 7 pF) • Fast switching • 100 % avalanche tested www.
DataSheet4U.
com • Improved dv/dt capability ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
D D ! ● ◀ ▲ ● ● G S D-PAK FQD Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Current Drain Current Parameter Drain-Source Voltage - Contin...


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