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MW6S010GNR1

Freescale Semiconductor
Part Number MW6S010GNR1
Manufacturer Freescale Semiconductor
Description LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
Published Jun 3, 2010
Detailed Description Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 3, 5/2006 RF Power Field Effect Transistor N - ...
Datasheet PDF File MW6S010GNR1 PDF File

MW6S010GNR1
MW6S010GNR1

Overview
Freescale Semiconductor Technical Data Document Number: MW6S010N Rev.
3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz.
Suitable for analog and digital modulation and multicarrier amplifier applications.
• Typical Two - Tone Performance at 960 MHz: VDD = 28 Volts, IDQ = 125 mA, Pout = 10 Watts PEP Power Gain — 18 dB Drain Efficiency — 32% IMD — - 37 dBc • Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • On - Chip RF Feedback for Broadband Stability www.
DataSheet4U.
com • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • 200°C Capable Plastic Package • N Suffix Indicates Lead - Free Terminations.
RoHS Compliant.
• In Tape and Reel.
R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
MW6S010NR1 MW6S010GNR1 450 - 1500 MHz, 10 W, 28 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1265 - 08, STYLE 1 TO - 270- 2 PLASTIC MW6S010NR1 CASE 1265A - 02, STYLE 1 TO - 270- 2 GULL PLASTIC MW6S010GNR1 Table 1.
Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value - 0.
5, +68 - 0.
5, +12 61.
4 0.
35 - 65 to +175 200 Unit Vdc Vdc W W/°C °C °C Table 2.
Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 10 W PEP Symbol RθJC Value (1.
2) 2.
85 Unit °C/W 1.
MTTF calculator available at http://www.
freescale.
com/rf.
Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product.
2.
Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.
freescale.
com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc.
, 2006.
All rights r...


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