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APT75M50B2

Microsemi
Part Number APT75M50B2
Manufacturer Microsemi
Description N-Channel MOSFET
Published Jun 3, 2010
Detailed Description APT75M50B2 APT75M50L 500V, 75A, 0.075Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switc...
Datasheet PDF File APT75M50B2 PDF File

APT75M50B2
APT75M50B2

Overview
APT75M50B2 APT75M50L 500V, 75A, 0.
075Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability.
Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance.
The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.
T-Ma x TM TO-264 APT75M50B2 APT75M50L D Single die MOSFET G S FEATURES • Fast switching with low EMI/RFI • Low RDS(on) • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant TYPICAL APPLICATIONS • PFC and other boost converter • Buck converter • Two switch forward (asymmetrical bridge) • Single switch forward • Flyback • Inverters Absolute Maximum Ratings Symbol Parameter ID Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C IDM Pulsed Drain Current 1 VGS Gate-Source Voltage EAS Single Pulse Avalanche Energy 2 IAR Avalanche Current, Repetitive or Non-Repetitive Thermal and Mechanical Characteristics Symbol Characteristic PD RθJC Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance RθCS Case to Sink Thermal Resistance, Flat, Greased Surface TJ,TSTG Operating and Storage Junction Temperature Range TL Soldering Temperature for 10 Seconds (1.
6mm from case) WT Package Weight Torque Mounting Torque ( TO-264Package), 4.
40 or M3 screw Ratings Unit 75 47 A 230 ±30 V 1580 mJ 37 A Min Typ Max Unit 1040 W 0.
12 °C/W 0.
11 -55 150 °C 300 0.
22 oz 6.
2 g 10 in·lbf 1.
1 N·m Microsemi Website - http://www.
microsemi.
com 050-8082 Rev E 8-2011 Static Characteristics TJ = 25°C unless otherwise specified S...


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