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APT30M61SFLL

Part Number	APT30M61SFLL
Manufacturer	Advanced Power Technology
Description	Power MOSFET
Published	Jun 3, 2010
Detailed Description	APT30M61BFLL APT30M61SFLL 300V 54A 0.061Ω POWER MOS 7 R FREDFET Power MOS 7® is a new generation of low loss, high vol...
Datasheet	APT30M61SFLL PDF File

Overview

APT30M61BFLL APT30M61SFLL 300V 54A 0.
061Ω POWER MOS 7 R FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Both conduction and switching losses and Q are addressed .
Power MOS with Power MOS 7® by significantly lowering 7® combines lower conduction and switching RDS(ON) losses g along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
TO-247 D3PAK • Lower Input Capacitance • Increased Power Dissipation D • Lower Miller Capacitance • Easier To Drive • Lower Gate Charge, Qg • TO-247 or Surface Mount D3PAK Package • FAST RECOVERY BODY DIODE G S MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter APT30M61BFLL-SFLL UNIT VDSS ID IDM VGS VGSM Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient 300 Volts 54 Amps 216 ±30 Volts ±40 PD Total Power Dissipation @ TC = 25°C Linear Derating Factor 403 3.
23 Watts W/°C TJ,TSTG TL IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 -55 to 150 300 54 30 1300 °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 300 RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 27A) IDSS Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C) IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 1mA) 3 Volts 0.
061 Ohms 250 µA 1000 ±100 nA 5 Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
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