DatasheetsPDF.com

IRFS3307ZPBF

Part Number	IRFS3307ZPBF
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Jun 3, 2010
Detailed Description	Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switc...
Datasheet	IRFS3307ZPBF PDF File

Overview

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability PD - 97214D IRFB3307ZPbF IRFS3307ZPbF IRFSL3307ZPbF HEXFET® Power MOSFET D VDSS 75V RDS(on) typ.
4.
6mΩ cmax.
5.
8mΩ G ID (Silicon Limited) 128A S ID (Package Limited) 120A D DD S D G TO-220AB IRFB3307ZPbF S G D2Pak IRFS3307ZPbF S D G TO-262 IRFSL3307ZPbF G Gate D Drain S Source Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C ID @ TC = 25°C IDM Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) dPulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage fPeak Diode Recovery TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.
6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) IAR EAR eSingle Pulse Avalanche Energy ÃdAvalanche Current gRepetitive Avalanche Energy Thermal Resistance Symbol RθJC Parameter kJunction-to-Case RθCS RθJA RθJA Case-to-Sink, Flat Greased Surface , TO-220 kJunction-to-Ambient, TO-220 jkJunction-to-Ambient (PCB Mount) , D2Pak Max.
128 90 120 512 230 1.
5 ± 20 6.
7 -55 to + 175 300 x x10lbf in (1.
1N m) 140 See Fig.
14, 15, 22a, 22b Typ.
––– 0.
50 ––– ––– Max.
0.
65 ––– 62 40 Units A W W/°C V V/ns °C mJ A mJ Units °C/W www.
irf.
com 1 08/19/11 IRFB/S/SL3307ZPbF Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min.
Typ.
Max.
Units Conditions V(BR)DSS ΔV(BR)DSS/ΔTJ RDS(on) VGS(th) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Sou...

Similar Datasheet

IRFS3307ZPBF HEXFET Power MOSFET - International Rectifier

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)