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IXFX200N10P

Part Number	IXFX200N10P
Manufacturer	IXYS
Description	Polar HiPerFET Power MOSFET
Published	Jun 6, 2010
Detailed Description	Advanced Technical Information www.DataSheet4U.com PolarTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFN 200N1...
Datasheet	IXFX200N10P PDF File

Overview

Advanced Technical Information www.
DataSheet4U.
com PolarTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFN 200N10P IXFK 200N10P IXFX 200N10P VDSS ID25 RDS(on) = 100 V = 200 A = 7.
5 mΩ Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings 100 100 ± 20 ± 30 V V V V A A A A mJ J V/ns W °C °C °C V~ miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C 200 100 400 60 100 4 10 800 -55 .
.
.
+175 175 -55 .
.
.
+150 Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal.
TO-264 AA (IXFK) G D S D (TAB) 50/60 Hz, RMS, 1 minute Mounting torque Terminal torque 2500 PLUS247 (IXGX) 1.
13/10 Nm/lb.
in.
1.
13/10 Nm/lb.
in.
C SOT-227B TO-264 PLUS247 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS VGS = 0 V, ID = 250 µA VDS = VGS, ID = 500µA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 0 V TJ = 150°C TJ = 175°C 30 g 10 g 6 g Characteristic Values Min.
Typ.
Max.
100 3.
0 5.
0 ±100 25 250 1000 7.
5 5.
5 V V nA µA µA µA mΩ mΩ E G = Gate E = Emitter Features z z C = Collector Tab = Collector z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z RDS(on) VGS = 10 V, ID = 0.
5 ID25 VGS = 15 V, ID = 400A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Easy to mount Space savings High power density DS99239B(03/05) © 2005 IXYS All rights reserved IXFK 200N10P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min.
Typ.
Max.
60 97 7600 VGS = 0 V, VDS = 25 V, f = 1 MHz 2900 860 30 VGS = 10 V, VDS = 0.
5 VDSS, ID = 60 A RG = 3.
3 Ω (External) 35 150 90 2...

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