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IXFN200N10P

Part Number	IXFN200N10P
Manufacturer	IXYS
Description	Polar HiPerFET Power MOSFET
Published	Jun 6, 2010
Detailed Description	Advanced Technical Information www.DataSheet4U.com PolarTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFN 200N1...
Datasheet	IXFN200N10P PDF File

Overview

Advanced Technical Information www.
DataSheet4U.
com PolarTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFN 200N10P IXFK 200N10P IXFX 200N10P VDSS ID25 RDS(on) = 100 V = 200 A = 7.
5 mΩ Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings 100 100 ± 20 ± 30 V V V V A A A A mJ J V/ns W °C °C °C V~ miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C 200 100 400 60 10...

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