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IXFR102N30P

Part Number	IXFR102N30P
Manufacturer	IXYS
Description	Polar HiPerFET Power MOSFET
Published	Jun 6, 2010
Detailed Description	Advanced Technical Information www.DataSheet4U.com PolarHTTM HiPerFET IXFR 102N30P Power MOSFET N-Channel Enhancement M...
Datasheet	IXFR102N30P PDF File

Overview

Advanced Technical Information www.
DataSheet4U.
com PolarHTTM HiPerFET IXFR 102N30P Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode VDSS ID25 RDS(on) trr = = = ≤ 300 V 60 A 36 mΩ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 300 300 ± 20 ± 30 60 250 60 60 2.
5 10 300 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A mJ J V/ns W °C °C °C °C V~ N/lb g z ISOPLUS247 (IXFR) E153432 G D ...

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IXFR102N30P Polar HiPerFET Power MOSFET - IXYS

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