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IXFR140N20P

Part Number	IXFR140N20P
Manufacturer	IXYS
Description	PolarHT HiPerFET Power MOSFET
Published	Jun 11, 2010
Detailed Description	Advance Technical Information PolarHTTM HiPerFET IXFR 140N20P Power MOSFET ISOPLUS247TM (Electrically Isolated Back Sur...
Datasheet	IXFR140N20P PDF File

Overview

Advance Technical Information PolarHTTM HiPerFET IXFR 140N20P Power MOSFET ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated; Fast Intrinsic Diode Symbol VDSS VDGR VGS VGSM ID25 IDRMS IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4 mA VGS = ± 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150°C 17 1.
6 mm (0.
062 in.
) from case for 10 s 50/60 Hz, RMS, 1 minute Mounting force Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C 300 -55 .
.
.
+175 175 -55 .
.
.
+150 300 2500 20.
.
120/4.
5.
.
20 5 W °C °C °C °C V~ N/lb.
g Maximum Ratings 200 200 ± 20 ± 30 75 75 280 60 100 4 10 V V V V A A A A mJ J V/ns G VDSS = ...

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