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IXTH88N30P

IXYS
Part Number IXTH88N30P
Manufacturer IXYS
Description PolarHT Power MOSFET
Published Jun 12, 2010
Detailed Description PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P V DS...
Datasheet PDF File IXTH88N30P PDF File

IXTH88N30P
IXTH88N30P

Overview
PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P V DSS ID25 RDS(on) = 300 V = 88 A ≤ 40 mΩ TO-247 (IXTH) Symbol VDSS V DGR VGS VGSM ID25 ID(RMS) IDM IAR E AR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 150° C T J = 25° C to 150° C; R GS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C T C = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS T J ≤150° C, R G = 4 Ω TC = 25° C 1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 s Mounting torque TO-247 TO-264 TO-3P & TO-268 Maximum Ratings 300 V 300 V G D S ±20 V TO-264 (IXTK) ±30 V 88 A 75 A 220 A 60 A 60 mJ G D S 2.
0 J TO-3P (IXTQ) 10 V/ns 600 W -55 .
.
.
+150 °C 150 °C -55 .
.
.
+150 °C 300 °C 260 °C 1.
13/10 Nm/lb.
in.
6.
0 g 10 g 5.
5 g G DS TO-268 (IXTT) G S D (TAB) D (TAB) (TAB) D (TAB) Sym...


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