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IXTP2R4N50P

IXYS
Part Number IXTP2R4N50P
Manufacturer IXYS
Description Power MOSFET
Published Jun 12, 2010
Detailed Description PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY2R4N50P IXTP2R4N50P Symbol VDSS VDGR VGSS VGSM ID2...
Datasheet PDF File IXTP2R4N50P PDF File

IXTP2R4N50P
IXTP2R4N50P

Overview
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY2R4N50P IXTP2R4N50P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.
6 mm (0.
062in.
) from Case for 10s Mounting Torque (TO-220) TO-252 TO-220 Maximum Ratings 500 V 500 V 30 V 40 V 2.
4 A 4.
5 A 2.
4 A 100 mJ 10 V/ns 56 W -55 .
.
.
+150 C 150 C -55 .
.
.
+150 C 300 °C 260 °C 1.
13 / 10 Nm/lb.
in 0.
35 g 3.
00 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 25μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.
5 • ID25, Note 1 Characteristic Values Min.
Typ.
Max.
500 V 3.
0 5.
5 V 50 nA 1 A 50 A 3.
75  VDSS = ID25 =  RDS(on) 500V 2.
4A 3.
75 TO-252 (IXTY) G S D (Tab) TO-220 (IXTP) GDS D (Tab) G = Gate D = Drain S = Source Tab = Drain Features  International Standard Packages  Low Q G  Avalanche Rated  Low Package Inductance  Fast Intrinsic Rectifier Advantages  High Power Density  Easy to Mount  Space Savings Applications  DC-DC Converters  Switch-Mode and Resonant-Mode Power Supplies  AC and DC Motor Drives   Discharge Circiuts in Lasers, Spark Igniters, RF Generators High Voltage Pulse Power Applications © 2017 IXYS CORPORATION, All Rights Reserved DS99445F(6/17) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 20V, ID = 0.
5 • ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz Qg(on) Qgs VGS = 10V, VDS = 0.
5 • VDSS, ID = 0.
5 • ID25 Qgd td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.
5 • VDSS, ID = 0.
5 • ID25 RG = 50 (External) RthJC RthCS TO-22...


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