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MRFG35020AR1

Part Number	MRFG35020AR1
Manufacturer	Freescale Semiconductor
Description	Gallium Arsenide PHEMT RF Power Field Effect Transistor
Published	Jun 14, 2010
Detailed Description	Freescale Semiconductor Technical Data Document Number: MRFG35020A Rev. 0, 1/2008 com Gallium Arsenide...
Datasheet	MRFG35020AR1 PDF File

Overview

Freescale Semiconductor Technical Data Document Number: MRFG35020A Rev.
0, 1/2008 com Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300- 3800 MHz frequency range.
Suitable for TDMA and CDMA amplifier applications.
To be used in Class AB applications.
• Typical WiMAX Performance: VDD = 12 Volts, IDQ = 300 mA, Pout = 2 Watts Avg.
, f = 3500 MHz, 802.
16d, 64 QAM 3/4, 4 bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 11.
5 dB Drain Efficiency — 22% RCE — - 33 dB Meets ETSI Type G Mask • 20 Watts P1dB @ 3500 MHz, CW Features...

Similar Datasheet

MRFG35020AR1 Gallium Arsenide PHEMT RF Power Field Effect Transistor - Freescale Semiconductor

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