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IXFR36N60P

IXYS
Part Number IXFR36N60P
Manufacturer IXYS
Description Power MOSFET
Published Jun 15, 2010
Detailed Description Advance Technical Information www.DataSheet4U.com PolarHV HiPerFET Power MOSFET (Electrically Isolated Back Surface) N-...
Datasheet PDF File IXFR36N60P PDF File

IXFR36N60P
IXFR36N60P

Overview
Advance Technical Information www.
DataSheet4U.
com PolarHV HiPerFET Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Preliminary Data Sheet Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C TM IXFR 36N60P VDSS ID25 RDS(on) t rr = 600 V = 20 A ≤ 200 mΩ ≤ 250 ns Maximum Ratings 600 600 ± 30 ± 40 20 80 36 50 1.
5 20 208 -55 .
.
.
+150 150 -55 .
.
.
+150 2500 V V V V A A A mJ J V/ns W °C °C °C V~ Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z International standard packages z Fast recovery diode z Unclamped Inductive Switching (UIS) rated z Low package inductance - eas...


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