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KTC3770T

KEC semiconductor
Part Number KTC3770T
Manufacturer KEC semiconductor
Description RF/VHF/UHF Transistor VHF/UHF Wide Band Amplifier Application
Published Jun 15, 2010
Detailed Description SEMICONDUCTOR TECHNICAL DATA VHF/UHF WIDE BAND AMPLIFIER APPLICATION. KTC3770T EPITAXIAL PLANAR NPN TRANSISTOR www.Data...
Datasheet PDF File KTC3770T PDF File

KTC3770T
KTC3770T

Overview
SEMICONDUCTOR TECHNICAL DATA VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
KTC3770T EPITAXIAL PLANAR NPN TRANSISTOR www.
DataSheet4U.
com E FEATURES Low Noise Figure, High Gain.
NF=1.
1dB, |S21e|2=11dB (f=1GHz).
G K B DIM A B 2 C 3 D MILLIMETERS _ 0.
2 2.
9 + 1.
6+0.
2/-0.
1 _ 0.
05 0.
70 + _ 0.
1 0.
4 + 2.
8+0.
2/-0.
3 _ 0.
2 1.
9 + 0.
95 _ 0.
05 0.
16 + 0.
00-0.
10 0.
25+0.
25/-0.
15 0.
60 0.
55 A F D 1 E F G H I J K L MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC PC * Tj Tstg 2 RATING 20 12 3 100 0.
9 150 -55 150 UNIT C I V V V mA W J L G H J 1.
EMITTER 2.
BASE 3.
COLLECTOR TSM * Package mounted on a ceramic board (600 0.
8 ) Marking h FE Rank Lot No.
Type Name R ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector Output Capacitance Reverse Transfer Capacitance Transition Frequency Insertion Gain Noise Figure SYMBOL ICBO IEBO hFE (Note1) Cob Cre fT |S21e| NF 2 TEST CONDITION VCB=10V, IE=0 VEB=1V, IC=0 VCE=10V, IC=20mA VCB=10V, IE=0, f=1MHz (Note2) VCE=10V, IC=20mA VCE=10V, IC=20mA, f=1GHz VCE=10V, IC=7mA, f=1GHz MIN.
50 5 7.
5 - TYP.
0.
65 7 11.
5 1.
1 MAX.
1 1 250 1.
0 1.
15 2 UNIT A A pF pF GHz dB dB Note 1 : hFE Classification A:50~100, B:80~160, C:125~250.
Note 2 : Cre is measured by 3 terminal method with capacitance bridge.
2005.
3.
22 Revision No : 0 1/5 KTC3770T www.
DataSheet4U.
com TYPICAL CHARACTERISTICS (Ta=25 C) OUTPUT CAPACITANCE C (pF) ob REVERSE TRANSFER CAPACITANCE C re (pF) COLLECTOR POWER DISSIPATION PC (W) Pc - Ta 1.
0 0.
8 0.
6 0.
4 0.
2 0 0 20 40 60 80 120 140 160 C ob , C re - VCB 5 3 f=1MHz Ta=25 C MOUNTED ON A CERAMIC BOARD (600mm2ΕΊ0.
8mm) 1 0.
5 0.
3 C ob C re 0.
1 0.
1 0.
3 0.
5 1 3 5 10 AMBIENT TEMPERATURE Ta ( C) COLLECTOR-BASE VOLTAGE VCB (V) h FE - I C VCE =10V S 2le 15 2 2 - IC DC ...


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