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IXTV18N60P

IXYS
Part Number IXTV18N60P
Manufacturer IXYS
Description Power MOSFET
Published Jun 15, 2010
Detailed Description PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTQ 18N60P IXTV 18N60P IXTV 18N60PS V = 600 V DSS I...
Datasheet PDF File IXTV18N60P PDF File

IXTV18N60P
IXTV18N60P

Overview
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTQ 18N60P IXTV 18N60P IXTV 18N60PS V = 600 V DSS ID25 = 18 A ≤ RDS(on) 420 mΩ Symbol V DSS VDGR V GS VGSM ID25 IDM IAR E AR EAS dv/dt PD T J TJM Tstg TL TSOLD Md Weight Test Conditions T J = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Tranisent TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C T C = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, T J ≤ 150°C, R G = 5 Ω TC = 25°C 1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P) TO-3P PLUS220 & PLUS220SMD Maximum Ratings TO-3P (IXTQ) 600 V 600 V ±30 V ±40 V G D S 18 A 54 A PLUS220 (IXTV) 18 A 30 mJ 1.
0 J 10 V/ns G DS D (TAB) D (TAB) 360 -55 .
.
.
+150 150 -55 .
.
.
+150 W PLUS220SMD (IXTV.
.
.
S) °C °C °C 300 °C 260 °C 1.
13/10 Nm/lb.
in.
G S D (TAB) 6 g 4 g G = Gate S = Source D = Drain TAB = Drain Symbol Test Conditions (TJ = 25°C, unless otherwise s...


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